An heuristic method for solving an inverse problem in semiconductors governed by a nonlinear coupled system

Document Type : Research Paper

Authors

1 Research Laboratory in Numerical Analysis and Nonlinear Analysis (LaR2A) Department of Mathematics, Faculty of Sciences, University Abdelmalek Essaadi, BP 2121 M'Hannech II 93030 Tetouan, Morocco.

2 Laboratory of Applied Mathematics and Computer Science, Faculty of Science and Technology, Cady Ayyad University, Marrakesh, Morocco.

Abstract

In this work, we utilize a coupled system to describe the carrier density in the Metal-Semiconductor Field-Effect Transistor (MESFET) device. To identify the depletion layer in this semiconductor, we define a cost functional $J$, and then use it to derive the shape optimization problem, for which we prove the existence of a solution. We develop an approach to solve this optimization problem using the finite element method combined with particle swarm optimization. Finally, we present several numerical examples to demonstrate the robustness of our proposed algorithm in identifying the depletion layer in the MESFET device.

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References

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Computational Methods for Differential Equations
Volume 14, Issue 2
April 2026
Pages 606-615

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History

  • Receive Date: 10 June 2024
  • Revise Date: 07 January 2025
  • Accept Date: 20 January 2025

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